- Low
- 103,285
- Average
- 103,285
- Median
- 103,285
- High
- 103,285
Infineon Technologies Americas Staff Engineer, Igbt Device Design Salary
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Infineon Technologies Americas Staff Engineer, Igbt Device Design average salary is $103,285, median salary is $103,285 with a salary range from $103,285 to $103,285.
Infineon Technologies Americas Staff Engineer, Igbt Device Design salaries are collected from government agencies and companies. Each salary is associated with a real job position. Infineon Technologies Americas Staff Engineer, Igbt Device Design salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.
Infineon Technologies Americas Staff Engineer, Igbt Device Design salaries are collected from government agencies and companies. Each salary is associated with a real job position. Infineon Technologies Americas Staff Engineer, Igbt Device Design salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.
| Jobtitle | Company | Salary | City | Year |
| Staff Engineer, Igbt Device Design | Infineon Technologies Americas | $ 103,285 | El Segundo, CA, 90245 | 12/14/2016 |
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Infineon Technologies Americas Staff Engineer, Igbt Device Design salary is full-time annual starting salary. Intern, contractor and hourly pay scale vary from regular exempt employee. Compensation depends on work experience, job location, bonus, benefits and other factors.
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