- Low
- 93,900
- Average
- 101,244
- Median
- -
- High
- 108,588
Plasma Etch Process Development Engineer Salary
39
68
78
Plasma Etch Process Development Engineer average salary is $101,244, median salary is $- with a salary range from $93,900 to $108,588.
Plasma Etch Process Development Engineer salaries are collected from government agencies and companies. Each salary is associated with a real job position. Plasma Etch Process Development Engineer salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.
Plasma Etch Process Development Engineer salaries are collected from government agencies and companies. Each salary is associated with a real job position. Plasma Etch Process Development Engineer salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.
| Company | Salaries | City | Year | More info |
| Micron Technology | 108,588-108,588 | Boise, ID, 83701 | 2015 | Micron Technology Plasma Etch Process Development Engineer Salaries (2) Plasma Etch Process Development Engineer Boise, ID Salaries |
| Micron Technology | 93,900-93,900 | Boise, ID, 83701 | 2012 | Micron Technology Plasma Etch Process Development Engineer Salaries (2) Plasma Etch Process Development Engineer Boise, ID Salaries |
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Plasma Etch Process Development Engineer salary is full-time annual starting salary. Intern, contractor and hourly pay scale vary from regular exempt employee. Compensation depends on work experience, job location, bonus, benefits and other factors.
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专利咨询师（双休）工资专利工程师（机械专业+五险一金）工资计算机、通信领域专利工程师/代理师（日语）工资 Plasma Etch Process Develop... Jobs
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